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H5N2519P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0478-0200 Rev.2.00 Nov.19.2004
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
TO-3P
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse) IDR Note3 IAP EARNote3 Pch Note2 ch-c Tch Tstg
Note1
Ratings 250 30 65 195 65 22 30.2 150 0.833 150 -55 to +150
Unit V V A A A A mJ W C/W C C
Rev.2.00 Nov. 19, 2004 page 1 of 6
H5N2519P
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 250 -- -- 3.0 28 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 47 0.029 4900 700 75 65 310 220 220 120 28 52 1.10 200 1.6 Max -- 1 0.1 4.5 -- 0.035 -- -- -- -- -- -- -- -- -- -- 1.65 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 32.5 A, VDS = 10 V Note4 ID = 32.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 32.5 A VGS = 10 V RL = 3.9 Rg = 10 VDD = 200 V VGS = 10 V ID = 65 A IF = 65 A, VGS = 0 Note4 IF = 65 A, VGS = 0 diF/dt = 100 A/s
Rev.2.00 Nov. 19, 2004 page 2 of 6
H5N2519P
Main Characteristics
Power vs. Temperature Derating 200
Pch (W)
1000 300
ID (A)
Maximum Safe Operation Area
150
100 30 10 3
DC Op
PW
er at
=
1m
10 m s( 1s
10
s
10 0 s s
Channel Dissipation
Drain Current
100
ion
(T
ho
c=
t)
25
50
Operation in 1 this area is limited by RDS(on)
C )
0.3 0.1 0 50 100 150 Tc (C) 200 1 Case Temperature Ta = 25C 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 100 7V 6.5 V
ID (A)
Typical Output Characteristics 100 10 V Pulse Test 6V 80
VDS = 10 V Pulse Test
ID (A)
80
60 5.5 V 40 5V VGS = 4.5 V 0 4 8 12 Drain to Source Voltage 16 20 VDS (V)
60
Drain Current
Drain Current
40
20
20
Tc = 75C
25C -25C 8 10 VGS (V)
0
2 4 6 Gate to Source Voltage
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (V)
Pulse Test I D = 65 A
2
1.5 32.5 A
1
0.5
10 A
Drain to Source on State Resistance RDS(on) ()
2.5
Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V 0.1
0.05
0.02
0
0.01 12 4 8 Gate to Source Voltage 16 20 VGS (V) 1 2 5 10 20 50 Drain Current ID (A) 100
Rev.2.00 Nov. 19, 2004 page 3 of 6
H5N2519P
Static Drain to Source on State Resistance vs. Temperature 0.100 Pulse Test 0.080 V GS = 10 V I D = 65 A Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance RDS(on) ()
100 50 20 10 5 75C 2 1 0.5 0.2 0.2 0.5 1 2 5 V DS = 10 V Pulse Test 10 20 ID (A) 50 100 25C Tc = -25C
0.060 32.5 A 0.040 10 A
0.020 0 -40
0 40 80 120 Case Temperature Tc (C) Body-Drain Diode Reverse Recovery Time
160
Drain Current
Typical Capacitance vs. Drain to Source Voltage
10000 5000
1000
Reverse Recovery Time trr (ns)
Ciss
500
Capacitance C (pF)
2000 1000 500 200 100 50
200 100 50
Coss
Crss
20 10 0.1
di / dt = 100 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics
VGS (V)
VGS = 0 f = 1 MHz 10 0 20 40 60 80 100 Drain to Source Voltage VDS (V)
20
500
VDS (V)
I D = 65 A V DS = 50 V 100 V 200 V VGS
20
10000
Switching Characteristics V GS = 10 V, V DD = 125 V PW = 5 s, duty < 1 % R g =10 tf t d(off)
400
16
Gate to Source Voltage
Switching Time t (ns)
Drain to Source Voltage
1000
tr
300 VDD
12
200
8
100
tf t d(on)
100
V DS = 200 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC)
4 0 200
0
tr 10 0.1 0.3
1 3 Drain Current
10 30 ID (A)
100
Rev.2.00 Nov. 19, 2004 page 4 of 6
H5N2519P
Reverse Drain Current vs. Source to Drain Voltage 100 5 Gate to Source Cutoff Voltage vs. Case Temperature V DS = 10 V I D = 10 mA
IDR (A)
80
Gate to Source Cutoff Voltage V GS(off) (V)
4
Reverse Drain Current
60 V GS = 0 V 40 10 V 5V Pulse Test 0 0.4 0.8 1.2 1.6 2.0
3 1 mA 2 0.1 mA
20
1 0 -50
Source to Drain Voltage
VSD (V)
0 50 100 150 Case Temperature Tc (C)
200
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 0.833C/W, Tc = 25C
PDM
D=
PW T
0.03
0.02 1 0.0
1s
PW T
h
p ot
uls
e
0.01 10
100
1m
10 m 100 m Pulse Width PW (s)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 125 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
Rev.2.00 Nov. 19, 2004 page 5 of 6
H5N2519P
Package Dimensions
As of January, 2003
5.0 0.3
15.6 0.3 4.8 0.2 1.5
Unit: mm
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2
18.0 0.5
0.6 0.2
3.6
0.9 1.0
5.45 0.5
5.45 0.5
Package Code JEDEC JEITA Mass (reference value) TO-3P -- Conforms 5.0 g
Ordering Information
Part Name H5N2519P-E Quantity 30 pcs Plastic magazine Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Nov. 19, 2004 page 6 of 6
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0

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